Samsung Electronics announced today that it has developed the industrys first and highest-capacity 32-gigabit (Gb) DDR5 DRAM1 using 12 nanometer (nm)-class process technology.
This comes after Samsung began mass production of its 12nm-class 16Gb DDR5 DRAM in May 2023. It solidifies Samsungs leadership in next-generation DRAM technology and signals the next chapter of high-capacity memory.
"With our 12nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data," Executive Vice President of DRAM Product & Technology at Samsung Electronics SangJoon Hwang said, according to a statement by Samsung.
Having developed its first 64-kilobit (Kb) DRAM in 1983, Samsung has now succeeded in enhancing its DRAM capacity by a factor of 500,000 over the last 40 years.
Source: Qatar News Agency